Datasheet4U Logo Datasheet4U.com

FQA11N90C-F109 - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 11 A, 900 V, RDS(on) = 1.1 Ω (Max. ) @ VGS = 10 V, ID = 5.5 A.
  • Low Gate Charge (Typ. 60 nC).
  • Low Crss (Typ. 23 pF).
  • 100% Avalanche Tested.
  • RoHS compliant.

📥 Download Datasheet

Datasheet preview – FQA11N90C-F109

Datasheet Details

Part number FQA11N90C-F109
Manufacturer ON Semiconductor
File Size 1.51 MB
Description N-Channel MOSFET
Datasheet download datasheet FQA11N90C-F109 Datasheet
Additional preview pages of the FQA11N90C-F109 datasheet.

📁 Similar Datasheet

  • FQA11N90C - 900V N-Channel MOSFET (Fairchild Semiconductor)
  • FQA11N90C_F109 - MOSFET (Fairchild Semiconductor)
  • FQA11N90 - 900V N-Channel MOSFET (Fairchild Semiconductor)
  • FQA11N90 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • FQA11N90_F109 - N-Channel QFET MOSFET (Fairchild Semiconductor)
  • FQA11N40 - 400V N-Channel MOSFET (Fairchild Semiconductor)
  • FQA10N60C - 600V N-Channel MOSFET (Fairchild Semiconductor)
  • FQA10N80 - 800V N-Channel MOSFET (Fairchild Semiconductor)
  • FQA10N80C - 800V N-Channel MOSFET (Fairchild Semiconductor)
  • FQA10N80C_F109 - N-Channel QFET MOSFET (Fairchild Semiconductor)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
FQA11N90C-F109 — N-Channel QFET® MOSFET FQA11N90C-F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A • Low Gate Charge (Typ. 60 nC) • Low Crss (Typ. 23 pF) • 100% Avalanche Tested • RoHS compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and elec-tronic lamp ballasts. D G G D S TO-3PN MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Published: |