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FQA11N90_F109 N-Channel QFET MOSFET

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Description

FQA11N90_F109 * N-Channel QFET® MOSFET FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Features

* 11.4 A, 900 V, RDS(on) = 960 mΩ (Max. ) @ VGS = 10 V, ID = 5.7 A
* Low Gate Charge (Typ. 72 nC)
* Low Crss (Typ. 30 pF)
* 100% Avalanche Tested

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📁 Related Datasheet

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FQA11N90_F109 N-Channel QFET MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQA11N90_F109-like datasheet
FQA11N90C
FQA11N90C_F109
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