FQA10N60C Datasheet - Fairchild Semiconductor

FQA10N60C 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQA10N60C Features

* 10A, 600V, RDS(on) = 0.73Ω @VGS = 10 V

* Low gate charge ( typical 44 nC)

* Low Crss ( typical 18 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability G DS TO-3PN FQA Series G! D !

* ◀▲

* ! S Absolute Maximum Ra

FQA10N60C-FairchildSemiconductor.pdf

FQA10N60C Datasheet Preview — Preview of FQA10N60C PDF

Datasheet Details

Part number:

FQA10N60C

Manufacturer:

Fairchild Semiconductor

File Size:

648.67 KB

Description:

600v n-channel mosfet.

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FQA10N60C FQA10N60C 600V N-Channel MOSFET Fairchild Semiconductor

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