FQA11N90 Datasheet, mosfet equivalent, Fairchild Semiconductor

FQA11N90 Features

• Mosfet
• 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A
• Low Gate Charge (Typ. 72 nC)
• Low Crss (Typ. 30 pF)
• 100% Avalanche Tested

PDF File Details

Part number:

FQA11N90

Manufacturer:

Fairchild Semiconductor

File Size:

1.33MB

Download:

📄 Datasheet

Description:

900v n-channel mosfet. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technolo

TAGS

FQA11N90

Fairchild Semiconductor

📁 Related Datasheet

FQA11N90 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor FQA11N90 FEATURES ·Drain Current : ID= 11.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On.

FQA11N90-F109 - N-Channel MOSFET (ON Semiconductor)
DATA SHEET .onsemi. MOSFET – N-Channel QFET 900 V, 11.4 A, 960 mW FQA11N90-F109 Description This N−Channel Enhancement Mode Power MOSFET is pr.

FQA11N90C - 900V N-Channel MOSFET (Fairchild Semiconductor)
FQA11N90C 900V N-Channel MOSFET September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features • • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low g.

FQA11N90C-F109 - N-Channel MOSFET (ON Semiconductor)
FQA11N90C-F109 — N-Channel QFET® MOSFET FQA11N90C-F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ V.

FQA11N90C_F109 - MOSFET (Fairchild Semiconductor)
FQA11N90C_F109 — N-Channel QFET® MOSFET FQA11N90C_F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ V.

FQA11N90_F109 - N-Channel QFET MOSFET (Fairchild Semiconductor)
FQA11N90_F109 — N-Channel QFET® MOSFET FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ Features • 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @.

FQA11N40 - 400V N-Channel MOSFET (Fairchild Semiconductor)

 
 
  QFET  $ $ $ $ $ $ %% &' ())* +
 , ) (&Ω -* , %) * .      /     01 2 .   /    .

FQA10N60C - 600V N-Channel MOSFET (Fairchild Semiconductor)
FQA10N60C FQA10N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced .

FQA10N80 - 800V N-Channel MOSFET (Fairchild Semiconductor)
FQA10N80 September 2000 QFET FQA10N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are .

FQA10N80C - 800V N-Channel MOSFET (Fairchild Semiconductor)
FQA10N80C 800V N-Channel MOSFET September 2006 QFET FQA10N80C 800V N-Channel MOSFET Features • • • • • • 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V Low g.