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FQA11N90C

900V N-Channel MOSFET

FQA11N90C Features

* 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 23pF) Fast switching 100% avalanche tested Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors a

FQA11N90C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQA11N90C Datasheet (820.01 KB)

Preview of FQA11N90C PDF

Datasheet Details

Part number:

FQA11N90C

Manufacturer:

Fairchild Semiconductor

File Size:

820.01 KB

Description:

900v n-channel mosfet.

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FQA11N90C 900V N-Channel MOSFET Fairchild Semiconductor

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