FQA11N90-F109 - N-Channel MOSFET
This N *Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanche energy s
FQA11N90-F109 Features
* 11.4 A, 900 V, RDS(on) = 960 mW (Max.) @ VGS = 10 V, ID = 5.7 A
* Low Gate Charge (Typ.72 nC)
* Low Crss (Typ. 30 pF)
* 100% Avalanche Tested
* This Device is Pb
* Free Halide, Free and RoHS Compliant MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise
