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FQA11N90-F109 N-Channel MOSFET

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Description

DATA SHEET www.onsemi.com MOSFET * N-Channel QFET 900 V, 11.4 A, 960 mW FQA11N90-F109 .
This N. Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.

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Features

* 11.4 A, 900 V, RDS(on) = 960 mW (Max. ) @ VGS = 10 V, ID = 5.7 A
* Low Gate Charge (Typ.72 nC)
* Low Crss (Typ. 30 pF)
* 100% Avalanche Tested
* This Device is Pb
* Free Halide, Free and RoHS Compliant MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise

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