Datasheet4U Logo Datasheet4U.com

FQA11N90-F109

N-Channel MOSFET

FQA11N90-F109 Features

* 11.4 A, 900 V, RDS(on) = 960 mW (Max.) @ VGS = 10 V, ID = 5.7 A

* Low Gate Charge (Typ.72 nC)

* Low Crss (Typ. 30 pF)

* 100% Avalanche Tested

* This Device is Pb

* Free Halide, Free and RoHS Compliant MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise

FQA11N90-F109 General Description

This N

*Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on

*state resistance, and to provide superior switching performance and high avalanche energy s.

FQA11N90-F109 Datasheet (296.58 KB)

Preview of FQA11N90-F109 PDF

Datasheet Details

Part number:

FQA11N90-F109

Manufacturer:

ON Semiconductor ↗

File Size:

296.58 KB

Description:

N-channel mosfet.

📁 Related Datasheet

FQA11N90 - 900V N-Channel MOSFET (Fairchild Semiconductor)
FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ April 2013 Features • 11.4 A,.

FQA11N90 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor FQA11N90 FEATURES ·Drain Current : ID= 11.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On.

FQA11N90C - 900V N-Channel MOSFET (Fairchild Semiconductor)
FQA11N90C 900V N-Channel MOSFET September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features • • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low g.

FQA11N90C-F109 - N-Channel MOSFET (ON Semiconductor)
FQA11N90C-F109 — N-Channel QFET® MOSFET FQA11N90C-F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ V.

FQA11N90C_F109 - MOSFET (Fairchild Semiconductor)
FQA11N90C_F109 — N-Channel QFET® MOSFET FQA11N90C_F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ V.

FQA11N90_F109 - N-Channel QFET MOSFET (Fairchild Semiconductor)
FQA11N90_F109 — N-Channel QFET® MOSFET FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ Features • 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @.

FQA11N40 - 400V N-Channel MOSFET (Fairchild Semiconductor)
         QFET  $ $ $ $ $ $ %% &' ())* +  , ) (&Ω -* , %) * .     /   01 2 .   /   .

FQA10N60C - 600V N-Channel MOSFET (Fairchild Semiconductor)
FQA10N60C FQA10N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced .

TAGS

FQA11N90-F109 N-Channel MOSFET ON Semiconductor

Image Gallery

FQA11N90-F109 Datasheet Preview Page 2 FQA11N90-F109 Datasheet Preview Page 3

FQA11N90-F109 Distributor