FQA11N90-F109 Datasheet, Mosfet, ON Semiconductor

FQA11N90-F109 Features

• Mosfet
• 11.4 A, 900 V, RDS(on) = 960 mW (Max.) @ VGS = 10 V, ID = 5.7 A
• Low Gate Charge (Typ.72 nC)
• Low Crss (Typ. 30 pF)
• 100% Avalanche Tested

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Part number:

FQA11N90-F109

Manufacturer:

ON Semiconductor ↗

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296.58kb

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📄 Datasheet

Description:

N-channel mosfet. This N

Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This a

TAGS

FQA11N90-F109

ON Semiconductor

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