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FQA6N90C-F109 N-Channel MOSFET

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Description

FQA6N90C-F109 * N-Channel QFET® MOSFET FQA6N90C-F109 N-Channel QFET® MOSFET 900 V, 6 A, 2.3 Ω .
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

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Features

* 6 A, 900 V, RDS(on) = 2.3 Ω (Max. ) @ VGS = 10 V, ID = 3 A
* Low Gate Charge (Typ. 30 nC)
* Low Crss (Typ. 11 pF)
* 100% Avalanche Tested

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