FQA6N90C-F109

N-Channel MOSFET

ON Semiconductor

FQA6N90C-F109 Features

* 6 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V, ID = 3 A

* Low Gate Charge (Typ. 30 nC)

* Low Crss (Typ. 11 pF)

* 100% Avalanche Tested

* RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprieta

FQA6N90C-F109 General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strengt.

FQA6N90C-F109 Datasheet (1.97 MB)