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FQA62N25C MOSFET

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Description

FQA62N25C * N-Channel QFET® MOSFET FQA62N25C N-Channel QFET® MOSFET 250 V, 62 A, 35 mΩ April 2014 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Features

* 62 A, 250 ID = 31 A V, RDS(on) = 35 mΩ (Max. ) @ VGS = 10 V,
* Low Gate Charge (Typ. 100 nC)
* Low Crss (Typ. 63.5 pF)
* 100% Avalanche Tested D G DS TO-3PN G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS E

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