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FQA62N25C

MOSFET

FQA62N25C Features

* 62 A, 250 ID = 31 A V, RDS(on) = 35 mΩ (Max.) @ VGS = 10 V,

* Low Gate Charge (Typ. 100 nC)

* Low Crss (Typ. 63.5 pF)

* 100% Avalanche Tested D G DS TO-3PN G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS E

FQA62N25C General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQA62N25C Datasheet (2.01 MB)

Preview of FQA62N25C PDF

Datasheet Details

Part number:

FQA62N25C

Manufacturer:

Fairchild Semiconductor

File Size:

2.01 MB

Description:

Mosfet.

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TAGS

FQA62N25C MOSFET Fairchild Semiconductor

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