FQA62N25C Datasheet (Fairchild Semiconductor)

FQA62N25C, MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQA62N25C Features

* 62 A, 250 ID = 31 A V, RDS(on) = 35 mΩ (Max.) @ VGS = 10 V,

* Low Gate Charge (Typ. 100 nC)

* Low Crss (Typ. 63.5 pF)

* 100% Avalanche Tested D G DS TO-3PN G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS E