Part number:
FQA11N90
Manufacturer:
Inchange Semiconductor
File Size:
286.60 KB
Description:
N-channel mosfet transistor.
* Drain Current : ID= 11.4A@ TC=25℃
* Drain Source Voltage : VDSS= 900V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.96Ω(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
* motor drive, DC-DC con
FQA11N90 Datasheet (286.60 KB)
FQA11N90
Inchange Semiconductor
286.60 KB
N-channel mosfet transistor.
📁 Related Datasheet
FQA11N90 - 900V N-Channel MOSFET
(Fairchild Semiconductor)
FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET
FQA11N90 / FQA11N90_F109
N-Channel QFET® MOSFET
900 V, 11.4 A, 960 mΩ
April 2013
Features
• 11.4 A,.
FQA11N90-F109 - N-Channel MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
MOSFET – N-Channel QFET
900 V, 11.4 A, 960 mW
FQA11N90-F109
Description This N−Channel Enhancement Mode Power MOSFET is pr.
FQA11N90C - 900V N-Channel MOSFET
(Fairchild Semiconductor)
FQA11N90C 900V N-Channel MOSFET
September 2006
QFET
FQA11N90C
900V N-Channel MOSFET
Features
• • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low g.
FQA11N90C-F109 - N-Channel MOSFET
(ON Semiconductor)
FQA11N90C-F109 — N-Channel QFET® MOSFET
FQA11N90C-F109
N-Channel QFET® MOSFET
900 V, 11.0 A, 1.1 Ω
Features
• 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ V.
FQA11N90C_F109 - MOSFET
(Fairchild Semiconductor)
FQA11N90C_F109 — N-Channel QFET® MOSFET
FQA11N90C_F109
N-Channel QFET® MOSFET
900 V, 11.0 A, 1.1 Ω
Features
• 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ V.
FQA11N90_F109 - N-Channel QFET MOSFET
(Fairchild Semiconductor)
FQA11N90_F109 — N-Channel QFET® MOSFET
FQA11N90_F109
N-Channel QFET® MOSFET
900 V, 11.4 A, 960 mΩ
Features
• 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @.
FQA11N40 - 400V N-Channel MOSFET
(Fairchild Semiconductor)
QFET
$ $ $ $ $ $ %% &' ())* + , ) (&Ω -* , %) * . / 01
2 . / .
FQA10N60C - 600V N-Channel MOSFET
(Fairchild Semiconductor)
FQA10N60C
FQA10N60C
600V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect transistors are produced .