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FQA11N90

N-Channel MOSFET Transistor

FQA11N90 Features

* Drain Current : ID= 11.4A@ TC=25℃

* Drain Source Voltage : VDSS= 900V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 0.96Ω(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* motor drive, DC-DC con

FQA11N90 General Description


*motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 11.4 A IDM Drain Current-Single Pluse 45.6 A PD .

FQA11N90 Datasheet (286.60 KB)

Preview of FQA11N90 PDF

Datasheet Details

Part number:

FQA11N90

Manufacturer:

Inchange Semiconductor

File Size:

286.60 KB

Description:

N-channel mosfet transistor.

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FQA11N90 N-Channel MOSFET Transistor Inchange Semiconductor

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