FQA6N70 Datasheet - Fairchild Semiconductor

FQA6N70 700V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the .

FQA6N70 Features

* 6.4A, 700V, RDS(on) = 1.5 Ω @ VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 15 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! ! " " " ! G DS TO-3P FQA Series TC = 25°C unless otherwise not

FQA6N70_FairchildSemiconductor.pdf