FQA6N90C_F109 900V N-Channel MOSFET

Fairchild Semiconductor

Description

FQA6N90C_F109 900V N-Channel MOSFET FQA6N90C_F109 900V N-Channel MOSFET .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQA6N90C_F109
Manufacturer: Fairchild Semiconductor
File Size: 791.23 KB
Datasheet: FQA6N90C_F109-FairchildSemiconductor.pdf
Description: 900V N-Channel MOSFET

Features

* 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V
* Low gate charge ( typical 30 nC)
* Low Crss ( typical 11pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

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📁 Related Datasheet

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FQA6N90C_F109 900V N-Channel MOSFET Fairchild Semiconductor

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