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FQA6N90C_F109

900V N-Channel MOSFET

FQA6N90C_F109 Features

* 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V

* Low gate charge ( typical 30 nC)

* Low Crss ( typical 11pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* RoHS compliant September 2007 QFET ® Description These N-Channel enhanc

FQA6N90C_F109 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQA6N90C_F109 Datasheet (791.23 KB)

Preview of FQA6N90C_F109 PDF

Datasheet Details

Part number:

FQA6N90C_F109

Manufacturer:

Fairchild Semiconductor

File Size:

791.23 KB

Description:

900v n-channel mosfet.

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TAGS

FQA6N90C_F109 900V N-Channel MOSFET Fairchild Semiconductor

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