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FQA6N90C_F109 - 900V N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FQA6N90C_F109
Manufacturer	Fairchild ↗ Semiconductor
File Size	791.23 KB
Description	900V N-Channel MOSFET
Datasheet	FQA6N90C_F109-FairchildSemiconductor.pdf

FQA6N90C_F109 Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V.
Low gate charge ( typical 30 nC).
Low Crss ( typical 11pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
RoHS compliant September 2007 QFET ®.

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Published: Dec 17, 2014 |