FQA65N20 Datasheet (Fairchild Semiconductor)

FQA65N20, 200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQA65N20 Features

* 65A, 200V, RDS(on) = 0.032Ω @VGS = 10 V Low gate charge ( typical 170 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS ! " " " TO-3P FQA Series TC = 25°C unless otherwise noted