FQA90N15-F109

N-Channel MOSFET

ON Semiconductor

FQA90N15-F109 Features

* RDS(on) = 18 mΩ (Max.) @ VGS = 10 V, ID = 45 A

* Low Gate Charge (Typ. 220 nC)

* Low Crss (Typ. 200 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Memperature Rating Description These N-Channel enhancement mode power field effect transistors are produ

FQA90N15-F109 General Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy .

FQA90N15-F109 Datasheet (1.24 MB)