FQA90N15

N-Channel Power MOSFET

Fairchild Semiconductor

FQA90N15 Features

* RDS(on) = 18 mΩ (Max.) @ VGS = 10 V, ID = 45 A

* Low Gate Charge (Typ. 220 nC)

* Low Crss (Typ. 200 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Memperature Rating May 2014 Description These N-Channel enhancement mode power field effect transistors

FQA90N15 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQA90N15 Datasheet (2.07 MB)

FQA90N15 Datasheet Preview — Preview of FQA90N15 PDF

Datasheet Details

Part number:

FQA90N15

Manufacturer:

Fairchild Semiconductor

File Size:

2.07 MB

Description:

N-channel power mosfet.

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FQA90N15 N-Channel Power MOSFET Fairchild Semiconductor

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FQA90N15 Features

FQA90N15 General Description

Datasheet Details

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Description:

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