FQA9N90C-F109

N-Channel QFET MOSFET

ON Semiconductor

FQA9N90C-F109 Features

* 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A

* Low Gate Charge (Typ. 45 nC)

* Low Crss . 14 pF)

* 100% Avalanche Tested

* RoHS compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary

FQA9N90C-F109 General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strengt.

FQA9N90C-F109 Datasheet (1.76 MB)