FQA90N08 Datasheet (Fairchild Semiconductor)

FQA90N08, 80V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQA90N08 Features

* 90 A, 80 V, RDS(on) = 16 mΩ (Max) @VGS = 10 V, ID = 45 A

* Low Gate Charge (Typ. 84 nC)

* Low Crss (Typ. 200 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating D G D S TO-3PN G S Absolute Maximum Ratings TC = 25°C unless otherwise n