FQA90N08

80V N-Channel MOSFET

Fairchild Semiconductor

FQA90N08 Features

* 90 A, 80 V, RDS(on) = 16 mΩ (Max) @VGS = 10 V, ID = 45 A

* Low Gate Charge (Typ. 84 nC)

* Low Crss (Typ. 200 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating D G D S TO-3PN G S Absolute Maximum Ratings TC = 25°C unless otherwise n

FQA90N08 General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQA90N08 Datasheet (2.30 MB)

FQA90N08 Datasheet Preview — Preview of FQA90N08 PDF

Datasheet Details

Part number:

FQA90N08

Manufacturer:

Fairchild Semiconductor

File Size:

2.30 MB

Description:

80v n-channel mosfet.

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FQA90N08 80V N-Channel MOSFET Fairchild Semiconductor

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FQA90N08 Features

FQA90N08 General Description

Datasheet Details

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Description:

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