FQA90N08 - 80V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQA90N08
Manufacturer	Fairchild ↗ Semiconductor
File Size	2.30 MB
Description	80V N-Channel MOSFET
Datasheet	FQA90N08_FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

90 A, 80 V, RDS(on) = 16 mΩ (Max) @VGS = 10 V, ID = 45 A.
Low Gate Charge (Typ. 84 nC).
Low Crss (Typ. 200 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating D G D S TO-3PN G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Ga.

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Published: Apr 1, 2005 |