FQA9N90-F109

N-Channel MOSFET

ON Semiconductor

FQA9N90-F109 Features

* 8.6 A, 900 V, RDS(on) = 1.3 Ω (Max.) @ VGS = 10 V, ID = 4.3 A

* Low Gate Charge (Typ. 55 nC)

* Low Crss (Typ. 25 pF)

* 100% Avalanche Tested

* RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s propr

FQA9N90-F109 General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strengt.

FQA9N90-F109 Datasheet (1.92 MB)