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FQA9N90C_F109

MOSFET

FQA9N90C_F109 Features

* 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A

* Low Gate Charge (Typ. 45 nC)

* Low Crss . 14 pF)

* 100% Avalanche Tested

* RoHS compliant April 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semicondu

FQA9N90C_F109 General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQA9N90C_F109 Datasheet (2.82 MB)

Preview of FQA9N90C_F109 PDF

Datasheet Details

Part number:

FQA9N90C_F109

Manufacturer:

Fairchild Semiconductor

File Size:

2.82 MB

Description:

Mosfet.

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FQA9N90C_F109 MOSFET Fairchild Semiconductor

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