FQA9N90
Fairchild Semiconductor
679.16kb
900v n-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS techn
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FQA9N90-F109 - N-Channel MOSFET
(ON Semiconductor)
FQA9N90-F109 — N-Channel QFET® MOSFET
FQA9N90-F109
N-Channel QFET® MOSFET
900 V, 8.6 A, 1.3 Ω
Features
• 8.6 A, 900 V, RDS(on) = 1.3 Ω (Max.) @ VGS .
FQA9N90C - 900V N-Channel MOSFET
(Fairchild Semiconductor)
FQA9N90C
QFET
FQA9N90C
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using F.
FQA9N90C-F109 - N-Channel QFET MOSFET
(ON Semiconductor)
FQA9N90C-F109 — N-Channel QFET® MOSFET
FQA9N90C-F109
N-Channel QFET® MOSFET
900 V, 9 A, 1.4 Ω Features
• 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 1.
FQA9N90C_F109 - MOSFET
(Fairchild Semiconductor)
FQA9N90C_F109 — N-Channel QFET® MOSFET
FQA9N90C_F109
N-Channel QFET® MOSFET
900 V, 9 A, 1.4 Ω Features
• 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 1.
FQA9N90_F109 - N-Channel QFET MOSFET
(Fairchild Semiconductor)
FQA9N90_F109 — N-Channel QFET® MOSFET
FQA9N90_F109
N-Channel QFET® MOSFET
900 V, 8.6 A, 1.3 Ω
May 2014
Features
• 8.6 A, 900 V, RDS(on) = 1.3 Ω (Ma.
FQA9N50 - 500V N-Channel MOSFET
(Fairchild Semiconductor)
QFET
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5 1 2 3.
FQA90N08 - 80V N-Channel MOSFET
(Fairchild Semiconductor)
FQA90N08 — N-Channel QFET® MOSFET
FQA90N08
N-Channel QFET® MOSFET
80 V, 90 A, 16 mΩ
June 2014
Description
This N-Channel enhancement mode power MOS.
FQA90N08 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
FQA90N08
FEATURES ·Drain Current : ID= 90A@ TC=25℃ ·Drain Source Voltage
: VDSS= 80V(Min) ·Static Drain-Source On-Re.
FQA90N15 - N-Channel Power MOSFET
(Fairchild Semiconductor)
FQA90N15 — N-Channel QFET® MOSFET
FQA90N15
N-Channel QFET® MOSFET
150 V, 90 A, 18 mΩ Features
• RDS(on) = 18 mΩ (Max.) @ VGS = 10 V, ID = 45 A • Low .
FQA90N15-F109 - N-Channel MOSFET
(ON Semiconductor)
FQA90N15-F109 — N-Channel QFET® MOSFET
FQA90N15-F109
N-Channel QFET® MOSFET
150 V, 90 A, 18 mΩ Features
• RDS(on) = 18 mΩ (Max.) @ VGS = 10 V, ID = 4.