FQA9N90

900V N-Channel MOSFET

Fairchild Semiconductor

FQA9N90 Features

* 8.6A, 900V, RDS(on) = 1.3Ω @VGS = 10 V Low gate charge ( typical 55 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !

* ◀ ▲

* G! G DS TO-3P FQA Series ! S Absolute Maximum

FQA9N90 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQA9N90 Datasheet (679.16 KB)

FQA9N90 Datasheet Preview — Preview of FQA9N90 PDF

Datasheet Details

Part number:

FQA9N90

Manufacturer:

Fairchild Semiconductor

File Size:

679.16 KB

Description:

900v n-channel mosfet.

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FQA9N90 900V N-Channel MOSFET Fairchild Semiconductor

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FQA9N90 Features

FQA9N90 General Description

Datasheet Details

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Description:

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