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FQA90N15_F109 - N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FQA90N15_F109
Manufacturer	Fairchild ↗ Semiconductor
File Size	1.15 MB
Description	N-Channel MOSFET
Datasheet	FQA90N15_F109-FairchildSemiconductor.pdf

FQA90N15_F109 Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

RDS(on) = 18 mΩ (Max. ) @ VGS = 10 V, ID = 45 A.
Low Gate Charge (Typ. 220 nC).
Low Crss (Typ. 200 pF).
100% Avalanche Tested.
175°C Maximum Junction Memperature Rating July 2015.

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Published: Oct 20, 2015 |