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FQA24N60 N-Channel MOSFET

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Description

MOSFET * N-Channel, QFET 600 V, 23.5 A, 240 mW FQA24N60 .
This N. Channel Enhancement Mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.

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Features

* 23.5 A, 600 V, RDS(on) = 240 mW (Max. ) @ VGS = 10 V, ID = 11.8 A
* Low Gate Charge (Typ. 110 nC)
* Low Crss (Typ. 56 pF)
* 100% Avalanche Tested
* This Device is Pb
* Free ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted. ) Symbol Parameter

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