FQA24N60 Datasheet - ON Semiconductor

N-Channel MOSFET

FQA24N60 Features

* 23.5 A, 600 V, RDS(on) = 240 mW (Max.) @ VGS = 10 V, ID = 11.8 A

* Low Gate Charge (Typ. 110 nC)

* Low Crss (Typ. 56 pF)

* 100% Avalanche Tested

* This Device is Pb

* Free ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted.) Symbol Parameter

FQA24N60 General Description

This N *Channel Enhancement Mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanche energy s.

FQA24N60 Datasheet (276.60 KB)