FQA24N50F Datasheet - Fairchild Semiconductor

FQA24N50F 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQA24N50F Features

* 24A, 500V, RDS(on) = 0.2Ω @VGS = 10 V Low gate charge ( typical 90 nC) Low Crss ( typical 55 pF) Fast switching 100% avalanche tested Improved dv/dt capability Fast recovery body diode ( max, 250ns ) D ! " G! G DS ! " " " TO-3

FQA24N50F_FairchildSemiconductor.pdf