FQA24N60 Datasheet (Fairchild Semiconductor)

FQA24N60, 600V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQA24N60 Features

* 23.5 A, 600 V, RDS(on) = 240 mΩ (Max.) @ VGS = 10 V, ID = 11.8 A

* Low Gate Charge (Typ. 110 nC)

* Low Crss (Typ. 56 pF)

* 100% Avalanche Tested D G G D S TO-3PN Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS