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FQA24N60 Datasheet - Fairchild Semiconductor

FQA24N60 600V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQA24N60 Features

* 23.5 A, 600 V, RDS(on) = 240 mΩ (Max.) @ VGS = 10 V, ID = 11.8 A

* Low Gate Charge (Typ. 110 nC)

* Low Crss (Typ. 56 pF)

* 100% Avalanche Tested D G G D S TO-3PN Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS

FQA24N60_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQA24N60

Manufacturer:

Fairchild Semiconductor

File Size:

1.51 MB

Description:

600v n-channel mosfet.

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FQA24N60 FQA24N60 600V N-Channel MOSFET Fairchild Semiconductor

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