Part number:
FQA28N50
Manufacturer:
Fairchild Semiconductor
File Size:
428.38 KB
Description:
500v n-channel mosfet.
FQA28N50 Datasheet (428.38 KB)
* 28.4 A, 500 V, RDS(on) = 160 mΩ (Max.) @ VGS = 10 V, ID = 14.2 A
* Low Gate Charge (Typ. 110 nC)
* Low Crss (Typ. 60 pF)
* 100% Avalanche Tested
* RoHS compliant August 2014 Description These N-Channel enhancement mode power field effect transistors are pro
FQA28N50 Datasheet (428.38 KB)
FQA28N50
Fairchild Semiconductor
428.38 KB
500v n-channel mosfet.
📁 Related Datasheet
FQA28N50F - 500V N-Channel MOSFET
(Fairchild Semiconductor)
FQA28N50F
September 2001
FRFET
FQA28N50F
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors a.
FQA28N50F - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-3P packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested .
FQA28N15 - 150V N-Channel MOSFET
(Fairchild Semiconductor)
FQA28N15 — N-Channel QFET® MOSFET
FQA28N15
N-Channel QFET® MOSFET
150 V, 33 A, 90 mΩ
June 2014
Description
Features
This N-Channel enhancement mo.
FQA20N40 - 400V N-Channel MOSFET
(Fairchild Semiconductor)
QFET
$ $ $ $ $ $ %& '( )**+ , - * ..Ω /+ - %* + 0 1 2*
3 0 1 .
FQA22N30 - 300V N-Channel MOSFET
(Fairchild Semiconductor)
QFET
% % % % % % &&' ())* + , ) -.Ω /* , -) * 0 1 23
4 0 1 2).
FQA22P10 - 100V P-Channel MOSFET
(Fairchild Semiconductor)
FQA22P10
QFET
FQA22P10
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using F.
FQA24N50 - 500V N-Channel MOSFET
(Fairchild Semiconductor)
FQA24N50 — N-Channel QFET® MOSFET
June 2014
FQA24N50
N-Channel QFET® MOSFET
500 V, 24 A, 200 mΩ
Features
• 24 A, 500 V, RDS(on) = 200 mΩ (Max.) @ VG.
FQA24N50F - 500V N-Channel MOSFET
(Fairchild Semiconductor)
FQA24N50F
September 2001
FRFET
FQA24N50F
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors a.
