FQPF12P10 Datasheet - Fairchild Semiconductor

FQPF12P10 100V P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQPF12P10 Features

* -8.2A, -100V, RDS(on) = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G GD S TO-220F FQP

FQPF12P10_FairchildSemiconductor.pdf