Description
FQP13N50C / FQPF13N50C * N-Channel QFET® MOSFET FQP13N50C / FQPF13N50C N-Channel QFET® MOSFET 500 V, 13 A, 480 mΩ .
These N-Channel enhancement mode power field effect
transistors are produced using ON Semiconductor’s
proprietary, planar stripe,
DMOS technology.
Features
* 13 A, 500 V, RDS(on) = 480 mΩ (Max. ) @ VGS = 10 V, ID = 6.5 A
* Low Gate Charge (Typ. 43 nC)
* Low Crss (Typ. 20 pF)
* 100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol
Parameter
VDSS
Drain-S
