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FQPF8N90C - N-Channel MOSFET

FQPF8N90C Description

FQP8N90C / FQPF8N90C * N-Channel QFET® MOSFET www.onsemi.com FQP8N90C / FQPF8N90C N-Channel QFET® MOSFET 900 V, 6.3 A, 1.9 Ω .
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

FQPF8N90C Features

* 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max. ) @ VGS = 10 V, ID = 3.15 A
* Low Gate Charge (Typ. 35 nC)
* Low Crss (Typ. 12 pF)
* 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID I

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N-Channel MOSFET ON Semiconductor
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