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FQPF27P06 - P-Channel MOSFET

FQPF27P06 Description

MOSFET * P-Channel, QFET) -60 V, -17 A, 70 mW FQPF27P06 .
This P. Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

FQPF27P06 Features

* 17 A,
* 60 V, RDS(on) = 70 mW (Max. ) @ VGS =
* 10 V, ID =
* 8.5 A
* Low Gate Charge (Typ. 33 nC)
* Low Crss (Typ. 120 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Temperature Rating www. onsemi. com VDSS
* 60 V R

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P-Channel MOSFET ON Semiconductor
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