FQPF27N25 Datasheet (Fairchild Semiconductor)

FQPF27N25, 250V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQPF27N25 Features

* 14 A, 250 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V, ID = 7 A

* Low Gate Charge (Typ. 50 nC)

* Low Crss (Typ. 45 pF)

* 100% Avalanche Tested D GDS TO-220F G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ