FQPF3N50C

500V N-Channel MOSFET

ON Semiconductor

FQPF3N50C Features

* 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V

* Low gate charge ( typical 10 nC )

* Low Crss ( typical 8.5 pF)

* Fast switching

* 100 % avalanche tested

* Improved dv/dt capability Description These N-Channel enhancement mode power field effect transisto

FQPF3N50C General Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy .

FQPF3N50C Datasheet (0.97 MB)