FQPF3N25 - 250V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology..

2.3 A, 250 V, RDS(on) = 2.2 Ω (Max. ) @ VGS = 10 V, ID = 1.15 A.
Low Gate Charge (Typ. 4.0 nC).
Low Crss (Typ. 4.7 pF).
100% Avalanche Tested D GDS G TO-220F Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Re.

📁 Related Datasheet

📌 All Tags

Fairchild Semiconductor FQPF3N25-like datasheet

FQPF3N25 Stock/Price