Part number:
FQPF3N25
Manufacturer:
Fairchild Semiconductor
File Size:
800.92 KB
Description:
250v n-channel mosfet.
FQPF3N25_FairchildSemiconductor.pdf
Datasheet Details
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in
FQPF3N25 Features
* 2.3 A, 250 V, RDS(on) = 2.2 Ω (Max.) @ VGS = 10 V, ID = 1.15 A
* Low Gate Charge (Typ. 4.0 nC)
* Low Crss (Typ. 4.7 pF)
* 100% Avalanche Tested D GDS G TO-220F Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS I
FQPF3N25_FairchildSemiconductor.pdf
Datasheet Details
FQPF3N25
Fairchild Semiconductor
800.92 KB
250v n-channel mosfet.
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