FQPF3N25 250V N-Channel MOSFET

Fairchild Semiconductor

Description

FQPF3N25 * N-Channel QFET® MOSFET FQPF3N25 N-Channel QFET® MOSFET 250 V, 2.3 A, 2.2 Ω November 2013 .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQPF3N25
Manufacturer: Fairchild Semiconductor
File Size: 800.92 KB
Datasheet: FQPF3N25_FairchildSemiconductor.pdf
Description: 250V N-Channel MOSFET

Features

* 2.3 A, 250 V, RDS(on) = 2.2 Ω (Max. ) @ VGS = 10 V, ID = 1.15 A
* Low Gate Charge (Typ. 4.0 nC)
* Low Crss (Typ. 4.7 pF)
* 100% Avalanche Tested D GDS G TO-220F Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS I

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FQPF3N25 250V N-Channel MOSFET Fairchild Semiconductor

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