FQPF3N25 Datasheet - Fairchild Semiconductor

FQPF3N25 250V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in.

FQPF3N25 Features

* 2.3 A, 250 V, RDS(on) = 2.2 Ω (Max.) @ VGS = 10 V, ID = 1.15 A

* Low Gate Charge (Typ. 4.0 nC)

* Low Crss (Typ. 4.7 pF)

* 100% Avalanche Tested D GDS G TO-220F Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS I

FQPF3N25_FairchildSemiconductor.pdf