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FQPF3N80 - 800V N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number: FQPF3N80
Manufacturer: Fairchild Semiconductor
File Size: 639.78 KB
Datasheet: FQPF3N80_FairchildSemiconductor.pdf
Description: 800V N-Channel MOSFET

FQPF3N80 Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology..

Features

1.8A, 800V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 7.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S 3 " " 5 TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Curr.

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800V N-Channel MOSFET Fairchild Semiconductor

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