800V Datasheet | Specifications & PDF Download

HCS80R250T Super Junction MOSFET August 2016 HCS80R250T 800V N-Channel Super Junction MOSFET Description ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely

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Silan Microelectronics SVF10N80F/K_Datasheet 10A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N80F/K is an N-channel enhancement mode power MOS

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SVF7N80T/F/KL_Datasheet 7A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N80T/F/KL is an N-channel enhancement mode power MOS field effect transisto

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FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET FQP6N80C / FQPF6N80C N-Channel QFET® MOSFET 800 V, 5.5 A, 2.5 Ω December 2013 Description This N-Chan

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UNISONIC TECHNOLOGIES CO., LTD 7N80 Power MOSFET 7.0A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N80 is a N-channel mode power MOSFET using

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HCS80R670S Dec 2019 HCS80R670S 800V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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FQPF2N80 September 2000 QFET FQPF2N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

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FQP3N80C / FQPF3N80C — N-Channel QFET® MOSFET FQP3N80C / FQPF3N80C N-Channel QFET® MOSFET 800 V, 3.0 A, 4.8  Features • 3.0 A, 800 V, RDS(on) = 4.8

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UNISONIC TECHNOLOGIES CO., LTD 12N80 12A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using

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Silan Microelectronics SVF8N80T/F/K_Datasheet 8A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N80T/F/K is an N-channel enhancement mode power MO

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HCS80R850S Dec 2019 HCS80R850S 800V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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UNISONIC TECHNOLOGIES CO., LTD 2N80Z Preliminary 2A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80Z is an N-channel mode power MOSFET usi

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FQA10N80C 800V N-Channel MOSFET FQA10N80C 800V N-Channel MOSFET Features • 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V • Low gate charge ( typical 44 nC) •

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SVF3N80M/F/D_Datasheet 3A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF3N80M/F/D is an N-channel enhancement mode power MOS field effect transistor w

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ISL9R2480G2 P RE LIMINARY Data Sheet November 2000 File Number 5005 24A, 800V Stealth™ Diode The ISL9R2480G2 is a Stealth™ diode optimized for lo

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www.DataSheet4U.com DIODE MODULE FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized,

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Silan Microelectronics SVF8N80T/F/K_Datasheet 8A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N80T/F/K is an N-channel enhancement mode power MO

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SVF4N80F/D/MJ/K_Datasheet 4A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N80F/D/MJ/K is an N-channel enhancement mode power MOS field effect transi

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FQP8N80C / FQPF8N80C / FQPF8N80CYDTU — N-Channel QFET® MOSFET December 2013 FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET® MOSFET 800 V, 8.0 A,

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HFS7N80 July 2005 BVDSS = 800 V HFS7N80 800V N-Channel MOSFET FEATURES ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technolog

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