HCS80R850S - 800V N-Channel Super Junction MOSFET
HCS80R850S Features
* Very Low FOM (RDS(on) X Qg)
* Extremely low switching loss
* Excellent stability and uniformity
* 100% Avalanche Tested
* Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 6.6 0.85 13.7 Unit V A Ω nC Application
