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HCS80R850S Datasheet - SemiHow

HCS80R850S 800V N-Channel Super Junction MOSFET

HCS80R850S Features

* Very Low FOM (RDS(on) X Qg)

* Extremely low switching loss

* Excellent stability and uniformity

* 100% Avalanche Tested

* Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 6.6 0.85 13.7 Unit V A Ω nC Application

Datasheet Details

HCS80R850S

SemiHow

245.65 KB

800v n-channel super junction mosfet.

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Stock and price

Infineon Technologies AG

S6E2HE4G0AGV20000

840 In Stock

Qty : 1008 units

Unit Price : $6.27

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HCS80R850S 800V N-Channel Super Junction MOSFET SemiHow

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