Junction Datasheet | Specifications & PDF Download

Thyristors 12 Amp High Junction Temperature SCRs SJxx12xx series RoHS Agency Approvals Agency * - L Package Only Schematic Symbol Agency File Numb

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RGP10A THRU RGP10M Features 1.0 AMP. Glass Passivated Junction Fast Recovery Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere DO-41 Hig

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EVALUATION KIT AVAILABLE Click here to ask about the production status of specific part numbers. MAX6675 Cold-Junction-Compensated K-Thermocoupleto

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Unijunction Transistor Description: A PN unijunction transistor in a TO–92 type package designed for use in pulse and timing circuits, sensing circ

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplif

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GLASSPASSIVATED J UNCTIONPLASTICRECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere 1N4001G THRU 1N4007G FEATURES * High reliability * Low c

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NCE70T540I，NCE70T540K N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction tech

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NCE65TF130T N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and

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HCA60R099F Dec 2021 HCA60R099F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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HCS80R250T Super Junction MOSFET August 2016 HCS80R250T 800V N-Channel Super Junction MOSFET Description ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely

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2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “p

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HCA60R070F July 2020 HCA60R070F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excell

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NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super

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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS*65R190S2 Rev. 1.7 A

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HCT70R1K6 Super Junction MOSFET Jan 2018 HCT70R1K6 700V N-Channel Super Junction MOSFET Features  Very Low FOM (RDS(on) X Qg)  Extremely low swit

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 2SK170 Low Noise Audio Amplifier Applications Unit: mm • Recommended for fi

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NCE70T260D,NCE70T260,NCE70T260F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super jun

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www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/

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