Junction Datasheet | Specifications & PDF Download

Thyristors 12 Amp High Junction Temperature SCRs SJxx12xx series RoHS Agency Approvals Agency * - L Package Only Schematic Symbol Agency File Numb

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EVALUATION KIT AVAILABLE Click here to ask about the production status of specific part numbers. MAX6675 Cold-Junction-Compensated K-Thermocoupleto

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RGP10A THRU RGP10M Features 1.0 AMP. Glass Passivated Junction Fast Recovery Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere DO-41 Hig

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GLASSPASSIVATED J UNCTIONPLASTICRECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere 1N4001G THRU 1N4007G FEATURES * High reliability * Low c

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Unijunction Transistor Description: A PN unijunction transistor in a TO–92 type package designed for use in pulse and timing circuits, sensing circ

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplif

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HCA60R099F Dec 2021 HCA60R099F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Di

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HCA60R070F July 2020 HCA60R070F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excell

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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Di

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UHF Hybrid Junction 5 MHz - 1 GHz Features q q q H-1-4 V2.00 C-33 Broad Frequency Range 0° - 180° Hybrid with High Isolation MIL-STD-202 Screening

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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Di

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U05GU4B48 SILICON DIFFUSED JUNCTION TYPE RECTIFIER STACK Reverse Voltage - 400 Volts Forward Current - 0.5 Ampere Application: TELCOMMUNICATION APPLIC

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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS*65R190S2 Rev. 1.7 A

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H-183-4 Microwave Hybrid Junction, 30 MHz - 3 GHz Features  0o - 180o Hybrid  Seven Octave Frequency Range C-11 Rev. V2 Guaranteed Specifications

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Microwave Hybrid Junction 30 MHz - 3 GHz Features q q H-183-4 V2.00 C-11 0°–180° Hybrid Seven Octave Frequency Range Guaranteed Specifications* Di

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Single Junction Drop-In Isolator 800MHz, 900MHz, 1800MHz, 1900MHz, 2100MHz Features • 20dB Isolation • 0.35dB Insertion Loss • Low cost package • Cus

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RGF10A THRU RGF10M SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere

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