Junction datasheet, features and benefits, stock and price

Multicomp

TO-92 - Unijunction Transistor

Oct 20, 2016 · 105 Hits ...

Toshiba

k246 - N-CHANNEL JUNCTION TYPE Field Effect Transistor

Apr 25, 2005 · 99 Hits Hz Ciss VDS = 10 V, VGS = 0, f = 1 MHz Crss VDG = 10 V, ID = 0, f = 1 MHz Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA Min ...

Maxim

MAX6675 - Cold-Junction-Compensated K-Thermocoupleto-Digital Converter

May 2, 2005 · 47 Hits ● Direct Digital Conversion of Type -K Thermocouple Output ● Cold-Junction Compensation ● Simple SPI-Compatible Serial Interface ● 12-Bit, 0.25°C Reso...

Wing On

PFP65R380 - N-Channel Super Junction MOSFET

Apr 17, 2019 · 45 Hits N-Channel Super Junction MOSFET  New technology for high voltage device  Low RDS(ON) and low conduction losses  Small package BVDSS = 650 V  ...

NCE Power Semiconductor

NCE65TF130T - N-Channel Super Junction Power MOSFET

Jun 5, 2018 · 38 Hits ●Optimized body diode reverse recovery performance ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driv...

Toshiba

K170 - FET/ Silicon N Channel Junction Type(for Low Noise Audio Amplifier)

Apr 25, 2005 · 31 Hits = −30 V, VDS = 0 V (BR) GDS VDS = 0, IG = −100 µA IDSS (Note) VDS = 10 V, VGS = 0 VGS (OFF) Yfs Ciss Crss NF (1) VDS = 10 V, ID = 0.1 µA VDS =...

NCE Power Semiconductor

NCE65TF130 - N-Channel Super Junction Power MOSFET

Jun 3, 2018 · 23 Hits ●Optimized body diode reverse recovery performance ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driv...

Microsemi Corporation

GC1504 - 30 VOLT ABRUPT JUNCTION VARACTOR DIODES

Mar 23, 2005 · 23 Hits  Highest Q  Lowest Rs  Large selection of capacitance values to chose from  Low phase noise  RoHS Compliant1 1 Most or our devices are supplied w...

Advanced Power Technology

APTC80TDU15P - Triple dual Common Source Super Junction MOSFET Power Module

Jul 3, 2007 · 21 Hits • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stra...

Zowie Technology Corporation

UGF20J - SURFACE MOUNT GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER

Oct 18, 2009 · 21 Hits 0.083(2.12) 0.077(1.95) 0.187(4.75) 0.167(4.24) * * * * * * * 0.016(0.40) 0.006(0.15) 0.102(2.60) 0.079(2.00) 0.050(1.27) 0.030(0.76) 0.236(6.00) 0....

VBsemi

CMH25N50 - N-Channel Super Junction Power MOSFET

Jul 18, 2024 · 21 Hits • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized C...

NCE Power Semiconductor

NCE65T260 - N-Channel Super Junction Power MOSFET

Jun 3, 2018 · 20 Hits ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving require...

NCE Power

NCE65R260 - N-Channel Super Junction Power MOSFET

Dec 30, 2016 · 20 Hits ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving require...

SUPER-SEMI

SSF65R190S2 - 650V N-Channel Super-Junction MOSFET

Sep 12, 2024 · 19 Hits • Multi-Epi process SJ-FET • 700V @TJ = 150 ℃ • Typ. RDS(on) = 0.16Ω • Ultra Low Gate Charge (typ. Qg = 36.5nC) • 100% avalanche tested SSF65R190S2 ...

NTE

2N2646 - Unijunction Transistor

Jun 19, 2017 · 18 Hits D Low Peak Point Current: 5A (Max) D Low Emitter Reverse Current: .005A (Typ) D Passivated Surface for Reliability & Uniformity Absolute Maximum R...

WAYON

WMP20N60C2 - Super Junction Power MOSFET

Dec 24, 2018 · 17 Hits  VDS =650V @ Tj,max  Typ. RDS(on) =0.26Ω  100% UIS tested  Pb-free plating, Halogen free Applications LED Lighting, Charger, Adapter, PC, LCD TV, ...

Vishay

1N4007GP-M3 - Glass Passivated Junction Plastic Rectifier

Nov 14, 2017 · 17 Hits • Superectifier structure for high reliability application • Cavity-free glass-passivated pallet chip junction • Low forward voltage drop • Low leakag...