Part number:
HCS86MS
Manufacturer:
Intersil Corporation
File Size:
176.63 KB
Description:
Radiation hardened quad 2-input exclusive or gate.
HCS86MS Features
* 3 Micron Radiation Hardened SOS CMOS
* Total Dose 200K RAD (Si)
* SEP Effective LET No Upsets: >100 MEV-cm2/mg
* Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
* Dose Rate Survivability: >1 x 1012 RAD (Si)/s
* Dose Rate Upset >10 1
Datasheet Details
HCS86MS
Intersil Corporation
176.63 KB
Radiation hardened quad 2-input exclusive or gate.
📁 Related Datasheet
HCS80R250T 800V N-Channel Super Junction MOSFET (SemiHow)
HCS80R650E 800V N-Channel Super Junction MOSFET (SemiHow)
HCS80R670S 800V N-Channel Super Junction MOSFET (SemiHow)
HCS80R850S 800V N-Channel Super Junction MOSFET (SemiHow)
HCS00MS Radiation Hardened Quad 2-Input NAND Gate (Intersil Corporation)
HCS02MS Radiation Hardened Quad 2-Input NOR Gate (Intersil Corporation)
HCS04MS Radiation Hardened Hex Inverter (Intersil Corporation)
HCS05MS Radiation Hardened Hex Inverter with Open Drain (Intersil Corporation)
HCS86MS Distributor