* 3 Micron Radiation Hardened SOS CMOS
* Total Dose 200K RAD (Si)
* SEP Effective LET No Upsets: >100 MEV-cm2/mg
* Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
* Dose Rate Survivability: >1 x 10 12 RAD (Si)/s
* Dose Rate Upset >1
HCS04MS
Intersil Corporation
104.79 KB
Radiation hardened hex inverter.
HCS04MS August 1995 Radiation Hardened Hex Inverter Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14 TOP VIEW A.
📁 Related Datasheet
HCS00MS Radiation Hardened Quad 2-Input NAND Gate (Intersil Corporation)
HCS02MS Radiation Hardened Quad 2-Input NOR Gate (Intersil Corporation)
HCS05MS Radiation Hardened Hex Inverter with Open Drain (Intersil Corporation)
HCS08 Microcontrollers (Freescale Semiconductor)
HCS0805 METAL STRIP CURRENT SENSING RESISTORS (HITANO)
HCS08MS Radiation Hardened Quad 2-Input AND Gate (Intersil Corporation)
HCS101 Fixed Code Encoder (Microchip)
HCS109MS Radiation Hardened Dual JK Flip Flop (Intersil)
HCS10MS Radiation Hardened Triple 3-Input NAND Gate (Intersil)
HCS112MS Radiation Hardened Dual JK Flip-Flop (Intersil Corporation)
