HCS10MS Datasheet (Intersil) - Radiation Hardened Triple 3-Input NAND Gate

HCS10MS, Radiation Hardened Triple 3-Input NAND Gate

The Intersil HCS10MS is a Radiation Hardened Triple 3Input NAND Gate.

A high on all inputs forces the output to a Low state.

The HCS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.

This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.

The HCS10M

HCS10MS Features

* 3 Micron Radiation Hardened SOS CMOS

* Total Dose 200K RAD (Si)

* SEP Effective LET No Upsets: >100 MEV-cm2/mg

* Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ)

* Dose Rate Survivability: >1 x 1012 RAD (Si)/s

* Dose Rate Upset >101