HCS80R650E - 800V N-Channel Super Junction MOSFET
HCS80R650E Features
* Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 8 0.65 12 Unit V A ȍ nC Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply
