Datasheet4U Logo Datasheet4U.com

HCS80R670S Datasheet - SemiHow

HCS80R670S 800V N-Channel Super Junction MOSFET

HCS80R670S Features

* Very Low FOM (RDS(on) X Qg)

* Extremely low switching loss

* Excellent stability and uniformity

* 100% Avalanche Tested

* Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 8 0.67 17.4 Unit V A Ω nC Application

HCS80R670S Datasheet (223.31 KB)

Preview of HCS80R670S PDF
HCS80R670S Datasheet Preview Page 2 HCS80R670S Datasheet Preview Page 3

Datasheet Details

Part number:

HCS80R670S

Manufacturer:

SemiHow

File Size:

223.31 KB

Description:

800v n-channel super junction mosfet.

📁 Related Datasheet

HCS80R650E 800V N-Channel Super Junction MOSFET (SemiHow)

HCS80R250T 800V N-Channel Super Junction MOSFET (SemiHow)

HCS80R850S 800V N-Channel Super Junction MOSFET (SemiHow)

HCS86MS Radiation Hardened Quad 2-Input Exclusive OR Gate (Intersil Corporation)

HCS00MS Radiation Hardened Quad 2-Input NAND Gate (Intersil Corporation)

HCS02MS Radiation Hardened Quad 2-Input NOR Gate (Intersil Corporation)

HCS04MS Radiation Hardened Hex Inverter (Intersil Corporation)

HCS05MS Radiation Hardened Hex Inverter with Open Drain (Intersil Corporation)

TAGS

HCS80R670S 800V N-Channel Super Junction MOSFET SemiHow

HCS80R670S Distributor