Datasheet4U.com

10N80C - 800V N-Channel MOSFET

Fairchild Semiconductor

📥 Download Datasheet

10N80C Datasheet Preview — Preview of 10N80C PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	10N80C
Manufacturer	Fairchild ↗ Semiconductor
File Size	799.07 KB
Description	800V N-Channel MOSFET
Datasheet	10N80C-FairchildSemiconductor.pdf

10N80C Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V.
Low gate charge ( typical 44 nC).
Low Crss ( typical 15pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability September 2006 QFET ®.

📁 10N80C Similar Datasheet

10N80 - N-Channel MOSFET (Inchange Semiconductor)
10N80-CQ - N-CHANNEL POWER MOSFET (UTC)
10N80-FC - N-CHANNEL POWER MOSFET (UTC)
10N03L - IPP10N03L (Infineon Technologies AG)
10N100-FL - 1000V N-CHANNEL POWER MOSFET (UTC)
10N12 - N-Channel MOSFET (INCHANGE)
10N15 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
10N30 - 300V N-CHANNEL POWER MOSFET (UTC)

Other Datasheets by Fairchild Semiconductor

10N120BND - HGTG10N120BND
10N20 - FQB10N20
10N20C - FQP10N20C
10N60A - Advanced Power MOSFET
10N60B - 600V N-Channel MOSFET
10N60C - 600V N-Channel MOSFET

Published: Nov 29, 2018 |