Part number:
10N120BND
Manufacturer:
Fairchild Semiconductor
File Size:
109.80 KB
Description:
Hgtg10n120bnd.
10N120BND Datasheet (109.80 KB)
Datasheet Details
10N120BND Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching appli
10N120BND Datasheet (109.80 KB)
Datasheet Details
10N120BND
Fairchild Semiconductor
109.80 KB
Hgtg10n120bnd.
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10N120BND Distributor