Part number:
10N120BND
Manufacturer:
Fairchild Semiconductor
File Size:
109.80 KB
Description:
Hgtg10n120bnd.
10N120BND-FairchildSemiconductor.pdf
Datasheet Details
10N120BND Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching appli
10N120BND-FairchildSemiconductor.pdf
Datasheet Details
10N120BND
Fairchild Semiconductor
109.80 KB
Hgtg10n120bnd.
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