Datasheet Specifications
- Part number
- 10N120BND
- Manufacturer
- Fairchild Semiconductor
- File Size
- 109.80 KB
- Datasheet
- 10N120BND-FairchildSemiconductor.pdf
- Description
- HGTG10N120BND
Description
Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Thr.
Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching appliApplications
* operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49302. Ordering Information PART NUMBER PACKAGE BRAND HGTG10N120BND TO-247 10N120BND10N120BND Distributors
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