Datasheet Details
- Part number
- 10N120BND
- Manufacturer
- Fairchild Semiconductor
- File Size
- 109.80 KB
- Datasheet
- 10N120BND-FairchildSemiconductor.pdf
- Description
- HGTG10N120BND
10N120BND Description
Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Thr.
10N120BND Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189.
The IGBT is ideal for many high voltage switching appli
10N120BND Applications
* operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49302.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG10N120BND
TO-247
10N120BND
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