10N120BND Datasheet - Fairchild Semiconductor

10N120BND, HGTG10N120BND

Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Thr.

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Datasheet Details

Part number:

10N120BND

Manufacturer:

Fairchild Semiconductor

File Size:

109.80 KB

Description:

HGTG10N120BND

Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching appli

Applications

* operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49302. Ordering Information PART NUMBER PACKAGE BRAND HGTG10N120BND TO-247 10N120BND

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10N120BND HGTG10N120BND Fairchild Semiconductor

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