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10N60A Datasheet - Fairchild Semiconductor

10N60A Advanced Power MOSFET

10N60A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 0.646 Ω (Typ.) SSP10N60A BVDSS = 600 V RDS(on) = 0.8 Ω ID = 9 A TO-220 1 2 3 1.Gate 2. Drain 3. Source

10N60A_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

10N60A

Manufacturer:

Fairchild Semiconductor

File Size:

280.80 KB

Description:

Advanced power mosfet.

10N60A Distributor

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10N60A 10N60A Advanced Power MOSFET Fairchild Semiconductor