10N60C - 600V N-Channel MOSFET

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Fairchild Semiconductor

Part number	10N60C
Manufacturer	Fairchild Semiconductor
File Size	870.91 KB
Description	600V N-Channel MOSFET
Datasheet	10N60C Datasheet
Additional preview pages of the 10N60C datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V.
Low gate charge ( typical 44 nC).
Low Crss ( typical 18 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability D ! GDS TO-220 FQP Series GD S TO-220F FQPF Series G!.
◀▲.
! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Cur.

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Published: Feb 22, 2008 |