10N60B - 600V N-Channel MOSFET

Fairchild Semiconductor

10N60B Datasheet Preview — Preview of 10N60B PDF

Datasheet Details

Part number	10N60B
Manufacturer	Fairchild ↗ Semiconductor
File Size	713.90 KB
Description	600V N-Channel MOSFET
Datasheet	10N60B_FairchildSemiconductor.pdf

10N60B Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar, DMOS technology.

Features

10A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
◀ ▲.
G! TO-3P G DS SSH Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drai.

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Other Datasheets by Fairchild Semiconductor

10N60A - Advanced Power MOSFET
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10N60NZ - N-Channel MOSFET
10N120BND - HGTG10N120BND
10N20 - FQB10N20
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Published: Aug 19, 2008 |