10N60B Datasheet, Mosfet, Fairchild Semiconductor

10N60B Features

  • Mosfet
  • 10A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanch

PDF File Details

Part number:

10N60B

Manufacturer:

Fairchild Semiconductor

File Size:

713.90kb

Download:

📄 Datasheet

Description:

600v n-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com plana

Datasheet Preview: 10N60B 📥 Download PDF (713.90kb)
Page 2 of 10N60B Page 3 of 10N60B

TAGS

10N60B
600V
N-Channel
MOSFET
Fairchild Semiconductor

📁 Related Datasheet

10N60 - N-Channel Power MOSFET (nELL)
SEMICONDUCTOR 10N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (10A, 600Volts) DESCRIPTION The Nell 10N60 is a three-terminal s.

10N60 - N-Channel Mosfet Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current –ID= 9.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistanc.

10N60 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
.. UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 10N60 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is .

10N60 - N-CHANNEL MOSFET (CHONGQING PINGYANG)
10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET FEATURE  10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% av.

10N60-HC - N-CHANNEL MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 10N60-HC 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60-HC is a high voltage and high current power MOSFE.

10N60-TC - N-CHANNEL MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 10N60-TC Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60-TC is a high voltage and high cur.

10N60A - Advanced Power MOSFET (Fairchild Semiconductor)
.. Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha.

10N60B - N-CHANNEL MOSFET (CHONGQING PINGYANG)
10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET FEATURE  10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% av.

10N60C - 600V N-Channel MOSFET (Fairchild Semiconductor)
.. FQP10N60C/FQPF10N60C FQP10N60C/FQPF10N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode p.

10N60F - N-CHANNEL MOSFET (CHONGQING PINGYANG)
10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET FEATURE  10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% av.

Stock and price

part
IXYS Corporation
IGBT PT 600V 20A TO-263AA
DigiKey
IXSA10N60B2D1
0 In Stock
Qty : 50 units
Unit Price : $1.95
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts