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10N12 - N-Channel MOSFET

10N12 Description

isc N-Channel Mosfet Transistor *.

10N12 Features

* Drain Current
* ID= 10A@ TC=25℃
* Drain Source Voltage- : VDSS= 120V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max)
* SOA is Power-Dissipation Limited
* Nanosecond Switching Speeds
* High Input Impedance
* Minimum Lot-to-Lot variations for robust device

10N12 Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
10N12
Manufacturer
INCHANGE
File Size
255.16 KB
Datasheet
10N12-INCHANGE.pdf
Description
N-Channel MOSFET

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INCHANGE 10N12-like datasheet