10N12 - N-Channel MOSFET
10N12 Features
* Drain Current
* ID= 10A@ TC=25℃
* Drain Source Voltage- : VDSS= 120V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max)
* SOA is Power-Dissipation Limited
* Nanosecond Switching Speeds
* High Input Impedance
* Minimum Lot-to-Lot variations for robust device
