10N45
INCHANGE
206.00kb
N-channel mosfet. *Drain Current *ID=10A@ TC=25℃ *Drain Source Voltage- : VDSS= 450V(Min) *Fast Switching Speed *Minimum Lot-to-Lot variations for robu
📁 Related Datasheet
10N40 - N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 10N40
Preliminary Power MOSFET
10.5A, 400V N-CHANNEL POWER MOSFET
1
DESCRIPTION
TO-220
The UTC 10N40 is an N-cha.
10N431K - MHS10N431K
(RGA)
.DataSheet.in
.
10N03L - IPP10N03L
(Infineon Technologies AG)
IPP10N03L IPB10N03L OptiMOS® Buck converter series
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO263 -3-2
30 8.9 73
P- TO.
10N100-FL - 1000V N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
10N100-FL
10A, 1000V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N100-FL is a high voltage power MOSFET bines adv.
10N12 - N-Channel MOSFET
(INCHANGE)
isc N-Channel Mosfet Transistor
·FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance.
10N120BND - HGTG10N120BND
(Fairchild Semiconductor)
Data Sheet
HGTG10N120BND
December 2001
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG10N120BND is a Non-Punch Thr.
10N15 - N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD
10N15
Preliminary
10A, 150V, 0.3Ω, N-CHANNEL POWER MOSFETS
1
DESCRIPTION
The UTC 10N15 is an N-channel enhanceme.
10N20 - FQB10N20
(Fairchild Semiconductor)
..
.
10N20C - FQP10N20C
(Fairchild Semiconductor)
..
FQP10N20C/FQPF10N20C
QFET
FQP10N20C/FQPF10N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power .
10N30 - 300V N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 10N30
Power MOSFET
10A, 300V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N30 is an N-channel mode power MOSFET usi.
