10N80 Datasheet, mosfet equivalent, Inchange Semiconductor

10N80 Features and benefits

10N80 Application

10N80 Description

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10N80-CQ - N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 10N80-CQ 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80-CQ provide excellent RDS(ON), low gate charge and.

10N80-FC - N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 10N80-FC 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80-FC provide excellent RDS(ON), low gate charge and.

10N80C - 800V N-Channel MOSFET (Fairchild Semiconductor)
FQA10N80C 800V N-Channel MOSFET FQA10N80C 800V N-Channel MOSFET Features • 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V • Low gate charge ( typical 44 nC) •.

10N03L - IPP10N03L (Infineon Technologies AG)
IPP10N03L IPB10N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 8.9 73 P- TO.

10N100-FL - 1000V N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 10N100-FL 10A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N100-FL is a high voltage power MOSFET combines adv.

10N12 - N-Channel MOSFET (INCHANGE)
isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance.

10N120BND - HGTG10N120BND (Fairchild Semiconductor)
Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Thr.

10N15 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 10N15 Preliminary 10A, 150V, 0.3Ω, N-CHANNEL POWER MOSFETS 1  DESCRIPTION The UTC 10N15 is an N-channel enhanceme.

10N20 - FQB10N20 (Fairchild Semiconductor)
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10N20C - FQP10N20C (Fairchild Semiconductor)
www..com FQP10N20C/FQPF10N20C QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power .