Part number: 10N80-CQ
Manufacturer: UTC
File Size: 711.31KB
Download: 📄 Datasheet
Description: N-CHANNEL POWER MOSFET
Part number: 10N80-CQ
Manufacturer: UTC
File Size: 711.31KB
Download: 📄 Datasheet
Description: N-CHANNEL POWER MOSFET
* RDS(ON) ≤ 1.4 Ω @ VGS=10V, ID=5.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedn.
* FEATURES
* RDS(ON) ≤ 1.4 Ω @ VGS=10V, ID=5.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Av.
The UTC 10N80-CQ provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES
* RDS(ON) ≤ 1.4 Ω @ VGS=10V, ID=5.0A * Low Reverse Transfer Capa.
Image gallery
TAGS
📁 Related Datasheet
10N80-FC - N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 10N80-FC
10A, 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N80-FC provide excellent RDS(ON), low gate charge and.
10N80 - N-Channel MOSFET
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
.
10N80C - 800V N-Channel MOSFET
(Fairchild Semiconductor)
FQA10N80C 800V N-Channel MOSFET
FQA10N80C
800V N-Channel MOSFET
Features
• 10A, 800V, RDS(on) = 1.1Ω @VGS = 10 V • Low gate charge ( typical 44 nC) •.
10N03L - IPP10N03L
(Infineon Technologies AG)
IPP10N03L IPB10N03L OptiMOS® Buck converter series
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO263 -3-2
30 8.9 73
P- TO.
10N100-FL - 1000V N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
10N100-FL
10A, 1000V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 10N100-FL is a high voltage power MOSFET combines adv.
10N12 - N-Channel MOSFET
(INCHANGE)
isc N-Channel Mosfet Transistor
·FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance.
10N120BND - HGTG10N120BND
(Fairchild Semiconductor)
Data Sheet
HGTG10N120BND
December 2001
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG10N120BND is a Non-Punch Thr.
10N15 - N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD
10N15
Preliminary
10A, 150V, 0.3Ω, N-CHANNEL POWER MOSFETS
1
DESCRIPTION
The UTC 10N15 is an N-channel enhanceme.
10N20 - FQB10N20
(Fairchild Semiconductor)
www.datasheet4u.com
.
10N20C - FQP10N20C
(Fairchild Semiconductor)
www..com
FQP10N20C/FQPF10N20C
QFET
FQP10N20C/FQPF10N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power .