MSF10N80 - 800V N-Channel MOSFET
MSF10N80 Features
* 100% EAS Test
* Rugged Gate Oxide Technology
* Extremely Low Intrinsic Capacitances
* Remarkable Switching Characteristics
* Unequalled Gate Charge: 10.5 nC (Typ.)
* Extended Safe Operating Area Lower RDS(ON) : 5.5 Ω (Typ.) @VGS=10V
* RoHS co
